| PART |
Description |
Maker |
| H15R1203 |
Reverse conducting IGBT
|
Infineon Technologies
|
| IHD06N60RA |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW20N120R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW15N120R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| DGT304RE DGT304RE13 |
Reverse Blocking Gate Turn-off Thyristor 390 A, 1300 V, REVERSE CONDUCTING GTO SCR
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| 5SHX14H4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 5SHX08F4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor 390 A, 4500 V, SCR
|
ABB, Ltd.
The ABB Group
|
| FGR3000FX90DA |
THYRISTOR|REVERSE-CONDUCTING|4.5KV V(DRM)|TO-200VAR120 晶闸管|反向导电| 4.5KV五（DRM）的|00VAR120
|
Mitsubishi Electric, Corp.
|
| IRGMVC50U |
600V COPACK Hi-Rel IGBT in a TO-258AA package
INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE
|
IRF[International Rectifier]
|
